**HMC783LP6CE: A 6 to 18 GHz GaAs MMIC Medium Power Amplifier for Broadband Applications**

The demand for high-performance, broadband solutions in modern electronic systems—spanning radar, electronic warfare (EW), communications, and test instrumentation—continues to drive the development of advanced monolithic microwave integrated circuits (MMICs). The **HMC783LP6CE** stands out as a premier GaAs MMIC medium power amplifier engineered to meet the rigorous requirements of applications operating from **6 to 18 GHz**.

This amplifier is fabricated using a high-reliability **0.25 µm GaAs pHEMT process**, which provides an excellent combination of wide bandwidth, high linearity, and superior power performance. The device delivers a typical **small-signal gain of 18 dB**, ensuring significant signal amplification across the entire frequency band. More critically, it achieves a **saturated output power (Psat) of +26 dBm** and an **output IP3 of +33 dBm**, making it an ideal choice for driving high-power amplifiers or serving as a final-stage amplifier in systems demanding robust linear performance.

A key advantage of the HMC783LP6CE is its exceptional **flatness and consistency in performance over its broad operational bandwidth**. The gain variation is typically within ±1.5 dB, which minimizes the need for complex external equalization circuits. Furthermore, the amplifier integrates on-chip DC blocking capacitors at both RF ports and an optimized matching network, simplifying board-level design and reducing the bill of materials. The MMIC is housed in a compact, RoHS-compliant **6-lead, 4x4 mm LP6 ceramic package**, suitable for high-volume surface-mount assembly.

The versatility of the HMC783LP6CE allows it to be deployed in a multitude of roles. It is perfectly suited as a **driver amplifier for transmit chains** in airborne radar and ground-based EW systems, where wide instantaneous bandwidth is paramount. In test and measurement setups, it serves as a reliable **gain block for signal generation and up-conversion paths**. Its high OIP3 also makes it valuable for amplifying complex modulated signals in modern communication links without introducing significant distortion.

**ICGOOODFIND**: The HMC783LP6CE is a high-performance, broadband GaAs pHEMT MMIC amplifier that provides an optimal blend of high gain, excellent linearity, and strong output power in a miniature surface-mount package. Its extensive frequency coverage from 6 to 18 GHz makes it a critical and versatile component for advancing capabilities in defense, aerospace, and communication infrastructure.

**Keywords**: Broadband Amplifier, GaAs pHEMT, Output IP3, Saturated Output Power, MMIC.