Infineon BSC019N08NS5 OptiMOS™ 5 Power MOSFET: Datasheet, Application Circuit, and Features

The Infineon BSC019N08NS5 is a state-of-the-art N-channel Power MOSFET from Infineon’s OptiMOS™ 5 80 V family, designed to deliver exceptional efficiency and robustness in a wide range of power conversion applications. This MOSFET combines low on-state resistance with high switching performance, making it an ideal choice for modern high-efficiency systems such as synchronous rectification, DC-DC converters, motor drives, and industrial power supplies.

Key Features

One of the standout characteristics of the BSC019N08NS5 is its extremely low RDS(on) of just 1.9 mΩ (max) at 10 V VGS. This remarkably low resistance minimizes conduction losses, leading to higher efficiency and reduced heat generation. The device is also optimized for fast switching, which helps in lowering switching losses in high-frequency circuits. With a voltage rating of 80 V and a continuous drain current capability of 210 A, this MOSFET can handle high power levels while maintaining stable operation. Additionally, it features low gate charge (Qgd) and excellent body diode characteristics, further enhancing its performance in hard-switching and freewheeling applications.

Application Circuit Example

A typical application for the BSC019N08NS5 is in a synchronous buck converter circuit, commonly used in voltage regulator modules (VRMs) and point-of-load (POL) converters. In such a setup, the MOSFET is often used as the low-side switch. Its low RDS(on) is critical for minimizing power loss during the freewheeling phase. To ensure optimal performance, the gate driver circuit should be designed to provide sufficient drive voltage and current for fast turn-on and turn-off. A gate driver IC with peak current capability of several amperes is recommended to fully utilize the switching speed of the MOSFET. Proper PCB layout—with short, low-inductance traces for the power loop and gate drive path—is essential to minimize ringing and electromagnetic interference (EMI).

Datasheet Overview

The datasheet for the BSC019N08NS5 provides comprehensive information including absolute maximum ratings, thermal characteristics, and detailed switching performance graphs. Key specifications to note are the high peak current capability (800 A), the SO8FL package offering low parasitic inductance, and the device’s qualification for automotive applications (AEC-Q101), underscoring its reliability under harsh conditions. Designers should pay close attention to the safe operating area (SOA) graphs and thermal resistance values to ensure adequate cooling in their application.

ICGOOODFIND

The Infineon BSC019N08NS5 sets a high standard for power MOSFETs with its outstanding combination of ultra-low on-resistance, high current handling, and superior switching performance. It is an excellent solution for designers aiming to maximize efficiency and power density in demanding applications.

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Keywords:

Power MOSFET, Low RDS(on), Synchronous Rectification, OptiMOS™ 5, High Efficiency