Infineon BSC350N20NSFDATMA1: High-Performance 20V OptiMOS 5 Power MOSFET

In the realm of power electronics, efficiency, thermal performance, and power density are paramount. The Infineon BSC350N20NSFDATMA1 stands out as a premier solution, embodying the advanced OptiMOS™ 5 technology to meet these demanding requirements. This 20V N-channel power MOSFET is engineered to deliver exceptional performance in a compact package, making it an ideal choice for a wide array of modern applications.

A key strength of this MOSFET lies in its extremely low figure-of-merit (R DS(on) x Q G). With a maximum drain-source on-state resistance (R DS(on)) of just 0.35 mΩ at 10 V, it minimizes conduction losses significantly. This allows for higher efficiency operation, reducing heat generation and improving the overall thermal profile of the end system. Concurrently, its low gate charge (Q G) ensures swift switching transitions, which is critical for high-frequency applications. This combination enables designers to push the boundaries of switching frequency without incurring prohibitive switching losses, leading to more compact and power-dense designs.

The device is housed in an SuperSO8 (PG-TDSON-8) package, which offers an excellent balance between a small footprint and superior thermal performance. This package is designed for effective heat dissipation, crucial for maintaining reliability under high-load conditions. The BSC350N20NSFDATMA1 is particularly adept at handling challenging loads in space-constrained environments.

Its primary applications are found in synchronous rectification in switched-mode power supplies (SMPS), voltage regulator modules (VRMs) for advanced microprocessors, and high-frequency DC-DC converters. It is also extensively used in power management for servers, telecommunications infrastructure, and automotive systems, where efficiency and reliability are non-negotiable.

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The Infineon BSC350N20NSFDATMA1 is a benchmark in power semiconductor technology, offering a superior blend of ultra-low resistance, fast switching speed, and robust thermal performance. It is an optimal component for engineers aiming to maximize efficiency and power density in next-generation electronic systems.

Keywords:

OptiMOS 5, Low RDS(on), High-Frequency Switching, Synchronous Rectification, Power Density