Infineon IPW60R099CP CoolMOS™ Power Transistor: Datasheet, Application Notes, and Design Considerations

The Infineon IPW60R099CP is a state-of-the-art superjunction MOSFET (CoolMOS™) belonging to the 600V C7 series, engineered to deliver exceptional efficiency and power density in a wide array of power conversion applications. This device is specifically designed for high-performance systems where minimizing losses and maximizing switching frequency are paramount.

Key Datasheet Parameters and Characteristics

The cornerstone of understanding any power semiconductor is its datasheet. For the IPW60R099CP, several parameters stand out:

Low On-State Resistance (RDS(on)): With a maximum RDS(on) of just 99 mΩ at a gate-source voltage (VGS) of 10 V, this MOSFET offers extremely low conduction losses. This is a critical figure for improving the full-load efficiency of a power supply.

High Current Capability: It features a continuous drain current (ID) of 11.3 A at 100°C, making it robust enough for medium to high-power applications.

Superior Switching Performance: The C7 technology underpinning this transistor is optimized for fast switching. It boasts low gate charge (QG) and very low effective output capacitance (COSS(eff)), which significantly reduces switching losses. This allows designers to push switching frequencies higher, leading to smaller magnetic components and overall more compact designs.

Enhanced Body Diode: The device features a fast intrinsic body diode with good reverse recovery characteristics, which is crucial for operation in bridge topologies like PFC or half-bridge circuits.

Primary Application Notes

The IPW60R099CP is an ideal choice for demanding switch-mode power supplies (SMPS) and other power conversion stages, including:

Server, Telecom, and Industrial SMPS: Its high efficiency directly contributes to meeting stringent energy efficiency standards like 80 Plus Titanium.

Power Factor Correction (PFC) Stages: Commonly used in both transition-mode (TM) and continuous-conduction-mode (CCM) boost PFC circuits due to its fast switching and low losses.

Lighting: High-end LED driving solutions and electronic ballasts.

Solar Inverters and UPS: For the DC-AC inversion stages where high voltage and reliability are required.

Critical Design Considerations

Successfully implementing the IPW60R099CP requires careful attention to several design aspects:

1. Gate Driving: To leverage its fast switching capability, a low-impedance, powerful gate driver is essential. The driver must be able to source and sink sufficient peak current to quickly charge and discharge the MOSFET's input capacitance, minimizing switch transition times.

2. PCB Layout: Parasitic inductance in the high-current loop (drain-source path) is a major enemy of high-frequency performance. It can lead to voltage spikes and ringing, increasing EMI and stress on the device. The layout must be as tight as possible, using short and wide traces or a ground plane.

3. Thermal Management: Despite its high efficiency, managing heat is critical for reliability. Ensure a low thermal resistance path from the case (DPAK package) to the heatsink or ambient. Proper soldering and mounting are vital to achieve the thermal performance stated in the datasheet.

4. Avalanche Ruggedness: While superjunction MOSFETs are robust, it is always prudent to design circuits to operate within the Absolute Maximum Ratings, avoiding unclamped inductive switching (UIS) conditions unless thoroughly validated against the datasheet's UIS energy ratings.

ICGOOODFIND

The Infineon IPW60R099CP CoolMOS™ Power Transistor stands as a premier choice for designers aiming to push the boundaries of efficiency and power density. Its optimal blend of extremely low RDS(on) and superior switching characteristics makes it a cornerstone technology for next-generation power supplies and energy conversion systems. By adhering to strict gate driving and layout practices, engineers can fully harness its potential to create smaller, cooler, and more efficient products.

Keywords:

CoolMOS™

Superjunction MOSFET

Switching Losses

Power Density

Gate Driver