Infineon IRLR024NTRLPBF N-Channel MOSFET: Key Specifications and Application Circuit Design
The Infineon IRLR024NTRLPBF is a popular N-Channel power MOSFET utilizing advanced trench technology, designed for high efficiency and fast switching in a variety of power management applications. Its combination of low on-state resistance and compact packaging makes it an excellent choice for designers seeking to minimize power losses and save board space in modern electronic systems.
Key Electrical Specifications
The standout feature of the IRLR024NTRLPBF is its exceptionally low drain-source on-state resistance (RDS(on)). At a gate-source voltage (VGS) of 10 V, the RDS(on) is a mere 17 mΩ, which drastically reduces conduction losses when the device is fully turned on. This low resistance allows the MOSFET to handle significant current with minimal voltage drop and heat generation.
This MOSFET is rated for a continuous drain current (ID) of 17 A at a case temperature (TC) of 25°C. Its drain-source voltage (VDS) rating is 55 V, making it well-suited for applications like DC-DC converters in 12V or 24V bus systems, motor control, and power switches. The device also features a low threshold voltage (VGS(th)) , typically around 2 V, which ensures compatibility with logic-level drivers and modern microcontrollers (MCUs), enabling direct drive from 3.3 V or 5 V signals without the need for an additional level-shifting circuit.
Housed in the space-efficient SO-8 package, this MOSFET is ideal for high-density PCB designs. Its fast switching characteristics are crucial for high-frequency operation in switch-mode power supplies (SMPS), which helps in reducing the size of associated passive components like inductors and capacitors.
Application Circuit Design: A Synchronous Buck Converter Example
A primary application for the IRLR024NTRLPBF is as the low-side switch in a synchronous buck converter circuit. This topology is ubiquitous in voltage regulation modules (VRMs) for processors and in point-of-load (POL) converters.
In this circuit:
1. A high-side MOSFET (often a P-Channel or another N-Channel with a dedicated driver IC) and the IRLR024NTRLPBF as the low-side switch work in complementary fashion.
2. A pulse-width modulation (PWM) signal from a controller IC drives the gates of these MOSFETs.
3. When the high-side switch is on, the low-side switch is off, and current flows from the input to the output, charging the inductor.
4. When the high-side switch turns off, the IRLR024NTRLPBF is turned on. Its low RDS(on) provides a very low-resistance path to ground, allowing the inductor current to freewheel efficiently with minimal voltage drop and power loss. This period is known as the "synchronous" phase.
Critical Design Considerations:
Gate Driving: To achieve fast switching and avoid operating in the linear region for extended periods, a dedicated gate driver IC is highly recommended. This ensures the gate is charged and discharged rapidly, providing the sharp voltage transitions needed for efficiency.
Bootstrapping: When used as a high-side switch (requiring a driver IC), a bootstrap circuit is necessary to generate a voltage higher than the input supply to fully enhance the MOSFET.
PCB Layout: The performance of a high-frequency switching circuit is heavily dependent on layout. Minimizing parasitic inductance in the high-current loop (input capacitor, MOSFETs, inductor) is paramount. This involves using short, wide traces and placing decoupling capacitors as close as possible to the MOSFET's drain and source pins.
The Infineon IRLR024NTRLPBF is a highly efficient and compact power switching solution, characterized by its extremely low on-resistance and logic-level compatibility. Its robust performance in switching applications like DC-DC converters and motor drivers makes it a fundamental component for engineers aiming to optimize power efficiency and density in their designs.
Keywords: Low RDS(on), Logic-Level Gate Drive, Synchronous Rectification, Power MOSFET, Buck Converter
