Intel TE28F128J3C120: A Comprehensive Technical Overview of the 128-Mbit Flash Memory Chip

The Intel TE28F128J3C120 represents a significant milestone in the evolution of non-volatile memory, embodying the advanced technology of its era. As a 128-Mbit (16-MByte) flash memory chip, it was engineered to deliver high-performance storage for a wide array of applications, from embedded systems and networking hardware to telecommunications infrastructure and industrial controllers.

Fabricated on a mature and reliable process technology, this chip is structured around a dual-bank architecture, which is a cornerstone of its performance. This design allows for simultaneous read and write operations, dramatically improving overall system throughput. One bank can be executing a program or erase algorithm while the other is being read, effectively minimizing latency and maximizing data availability.

A key feature of the TE28F128J3C120 is its 1.8V VCC core voltage supply, which enables lower power consumption compared to its 3.3V predecessors. This made it an attractive solution for power-sensitive and portable applications. Despite the low core voltage, it maintains a 3.3V-compatible I/O interface, ensuring easy integration with existing system logic and controllers without requiring level shifters.

The device operates through a Common Flash Interface (CFI)-compliant command set, which standardizes the software interface and simplifies the design-in process for system developers. This allows host software to automatically query the flash memory to determine its configuration, voltage requirements, and timing parameters, ensuring broad compatibility.

Organized as 128 Megabits, it is typically configured as 8,192 erasable blocks (sectors) of 16 Kbytes each. This flexible sector architecture provides fine granularity for data storage and firmware updates, allowing specific memory sections to be erased and reprogrammed without disturbing others. The chip boasts a robust 100,000 program/erase cycles per block endurance rating, ensuring long-term data retention and reliability for demanding use cases.

Performance metrics are impressive for its generation. The TE28F128J3C120 offers fast 70ns and 90ns page read access times from its 16-word read page buffer. Write operations are also efficient, with a typical 4-word write buffer that accelerates programming. Block erase times are on the order of 0.7 seconds, making firmware updates and data management relatively swift.

Packaged in a standard 56-Lead TSOP (Thin Small Outline Package), the chip is designed for space-constrained PCB layouts and offers excellent solderability and reliability. Its operational temperature range often spans from -40°C to +85°C, catering to both commercial and industrial applications.

ICGOOODFIND: The Intel TE28F128J3C120 stands as a robust and highly capable flash memory solution, distinguished by its dual-bank architecture for concurrent operations, low 1.8V core power consumption, and industry-standard CFI compatibility. Its excellent endurance and performance made it a workhorse in countless 32-bit embedded systems, showcasing Intel's leadership in memory technology.

Keywords:

1. Dual-Bank Architecture

2. 1.8V Core Voltage

3. Common Flash Interface (CFI)

4. 128-Mbit Density

5. Program/Erase Endurance