Infineon IKQ75N120CT2: Powering the Next Generation of High-Efficiency Systems

The relentless pursuit of higher efficiency, greater power density, and enhanced reliability in power electronics drives continuous innovation in semiconductor technology. At the forefront of this evolution is the Infineon IKQ75N120CT2, a 1200V, 75A IGBT that sets a new benchmark for performance in a robust TO-247-3 package. Leveraging the advanced TRENCHSTOP™ IGBT7 technology, this device is engineered to meet the demanding requirements of modern high-power applications, from industrial motor drives and renewable energy systems to uninterruptible power supplies (UPS) and EV charging infrastructure.

Unmatched Performance with TRENCHSTOP™ IGBT7 Technology

The core of the IKQ75N120CT2's superiority lies in its 7th generation IGBT technology. This latest iteration introduces a micro-pattern trench (MPT) structure that significantly optimizes the trade-off between low saturation voltage (Vce(sat)) and minimal switching losses. For system designers, this translates directly into higher overall efficiency, allowing for operation at higher switching frequencies without the excessive heat generation that plagues previous generations. The result is the potential for smaller magnetic components and heatsinks, leading to a substantial reduction in system size, weight, and ultimately, cost.

Key Features and Benefits

Ultra-Low Vce(sat): The device boasts an exceptionally low collector-emitter saturation voltage, which minimizes conduction losses during operation. This is particularly beneficial in applications with high continuous currents, as it directly reduces power dissipation.

High-Speed Switching: Engineered for speed, the IKQ75N120CT2 achieves significantly reduced turn-off losses. This capability is crucial for increasing the power density of systems by enabling higher switching frequencies.

Robustness and Reliability: With a rated voltage of 1200V and a high current capability of 75A, this IGBT offers a strong safety margin against voltage spikes and transients common in industrial environments. The TO-247-3 package ensures excellent thermal performance, providing a low thermal resistance path for effective heat management.

Temperature Stability: The IGBT7 technology ensures stable switching behavior across a wide junction temperature range, enhancing the reliability and longevity of the end product even under strenuous operating conditions.

Application-Oriented Design

The Infineon IKQ75N120CT2 is not just a component; it is a solution. Its optimized characteristics make it an ideal choice for:

Three-Phase Motor Drives: Enabling compact and efficient designs for industrial automation.

Solar Inverters and Energy Storage Systems: Maximizing energy harvest and conversion efficiency.

Welding Equipment and UPS: Providing robust and reliable power in critical applications.

Plasma Generation and Induction Heating: Where high power and fast switching are paramount.

ICGOODFIND Summary

The Infineon IKQ75N120CT2 represents a significant leap forward in high-voltage switching technology. By masterfully balancing the lowest conduction and switching losses in its class, it delivers uncompromising efficiency and power density. Its integration into a industry-standard package makes it a versatile and powerful drop-in solution for upgrading existing designs or creating the next generation of high-performance power electronics systems. For engineers seeking to push the boundaries of what's possible, this IGBT7 is a definitive component.

Keywords:

TRENCHSTOP™ IGBT7

High-Speed Switching

Low Saturation Voltage

Power Density

TO-247-3 Package