Infineon IRF1404PBF N-Channel Power MOSFET: Key Specifications and Applications
The Infineon IRF1404PBF is a highly efficient N-Channel power MOSFET designed to meet the demanding requirements of high-current switching applications. Utilizing advanced silicon technology, this component is engineered for low on-state resistance and high switching speed, making it a cornerstone in modern power electronics design.
Key Specifications
The standout feature of the IRF1404PBF is its exceptionally low typical on-state resistance (RDS(on)) of just 4.0 mΩ at a gate-to-source voltage (VGS) of 10 V. This low resistance minimizes conduction losses, significantly improving overall system efficiency and reducing heat generation. The device is rated for a continuous drain current (ID) of 162 A at a case temperature (TC) of 25°C, showcasing its ability to handle substantial power. It offers a high drain-to-source voltage (VDS) rating of 40 V, making it suitable for various automotive and industrial power systems. Furthermore, its avalanche ruggedness ensures high reliability and durability in harsh operating conditions, capable withstanding energy from unclamped inductive switching events.
Primary Applications

The combination of high current handling and low RDS(on) makes the IRF1404PBF ideal for a wide array of applications. It is predominantly used in:
DC-DC Converters: Its efficiency is critical for switch-mode power supplies (SMPS) and voltage regulator modules (VRMs).
Motor Control Systems: The MOSFET provides robust performance in driving brushed DC motors, as seen in automotive systems like electric power steering (EPS), fuel pumps, and fan controllers.
Power Management in Automotive: It is extensively used in 12/24 V systems for applications such as electronic braking systems (EBS) and ignition switches.
Solenoid and Relay Drivers: The device can efficiently switch high currents required to activate industrial solenoids and relays.
ICGOOODFIND: The Infineon IRF1404PBF is a high-performance power MOSFET that excels in efficiency and reliability. Its industry-leading low RDS(on) and high current capability make it an optimal choice for designers seeking to minimize power loss and maximize performance in high-current switching applications, particularly within the automotive sector.
Keywords: Power MOSFET, Low RDS(on), High Current Switching, Automotive Applications, Motor Control
